Samsung has announced the first production of high-performance toggle DDR 2.0 multi-level-cell memory chip, NAND flash featuring 64 gigabit density.
It claims the MLC chip can turn data out at bandwidth of 400 Mbps, 10 times faster than the 40Mbps SDR NAND flash that is doing the rounds at the moment.
The chip also runs three times faster, Samsung says, than its 133Mbps toggle DDR 1.0 32Gb NAND memory, which it coughed up in 2009.
The chip is 20-nanometre class. Samsung hopes that it will find its way into the next generation of smartphones as well as SATA 6Gbps SSDs.
A spokesperson said in a statement that the company will continue to pursue high-efficiency and density DDR NAND flash, and that continued improvements are vital for boosting the performance of mobile devices from here until infinity.
Samsung's performance in NAND has seen it approach Intel's turf domination closer than any other rival over the last 10 years.
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